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| Preliminary Product Description Sirenza Microdevices' SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. At 850 Mhz and 35mA , the SGA3586 typically provides +25 dBm output IP3, 25dB of gain, and +13.5 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Frequency VD= 3.3 V, ID= 35 mA (Typ.) SGA-3586 DC-5000 MHz Silicon Germanium Cascadeable Gain Block 32 GAIN 0 -10 IRL 24 Gain (dB) Return Loss (dB) Product Features * DC-5000 MHz Operation * Single Voltage Supply * High Gain: 25 dB typ. at 850 MHz * Low Current Draw: 35mA at 3.3V typ. * Low Noise Figure: 2.5 dB typ. at 1950 MHz Applications * PA Driver Amplifier * Cellular, PCS, GSM, UMTS * IF Amplifier * Wireless Data, Satellite U nits dB Frequency 850 MHz 1950 MHz 2400 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz Min. 22.5 18.0 Typ. 25.0 20.0 18.5 13.5 13.5 25.0 26.0 5000 1950 MHz 1950 MHz 1950 MHz 3.0 31 12.8 19.0 2.5 3.3 35 97 3.5 3.6 39 Max. 27.5 22.0 16 ORL -20 -30 -40 0 1 2 3 4 5 6 Frequency (GHz) 8 0 Symbol G Parameter Small Si gnal Gai n P 1dB OIP3 Output Power at 1dB C ompressi on Output Thi rd Order Intercept Poi nt dB m dB m MHz dB dB dB V mA C /W 11.5 23.5 Bandwi dth D etermi ned by Return Loss (>10dB) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead) VS = 5 V RBIAS = 130 Ohms ID = 35 mA Typ. TL = 25C Test Conditions: OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101382 Rev C Preliminary Preliminary SGA-3586 DC-5000 MHz SiGe Amplifier Typical RF Performance at Key Operating Frequencies Symbol Parameter Unit 100 500 Frequency Frequency (MHz) Frequency (MHz)(MHz) 850 1950 2400 3500 G OIP3 P 1dB IRL ORL S 12 NF Small Signal Gain Output Third Order Intercept Point Output Power at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS = 8 V VS = 8 V RBIAS = 130 Ohms RBIAS = 39 Ohms dB dB m dB m dB dB dB dB 28.2 27.1 23.5 13.3 25.0 25.0 13.5 10.7 15.9 28.1 2.5 20.0 26.0 13.5 10.5 20.5 24.1 2.5 18.5 26.5 13.2 11.1 20.3 22.4 2.5 14.8 28.4 31.5 29.4 12.8 17.1 29.0 2.4 10.6 18.9 19.2 Test Conditions: = 35 mA Typ. IID = 80 mA Typ. D T = 25C TLL = 25C OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms Noise Figure vs. Frequency VD= 3.3 V, ID= 35 mA (Typ.) 5 Noise Figure (dB) 4 3 2 1 Absolute Maximum Ratings Parameter Max. Device Current (ID) Max. Device Voltage (VD) Max. RF Input Power Max. Junction Temp. (TJ) Operating Temp. Range (TL) Absolute Limit 70 mA 5V +18 dBm +150C -40C to +85C +150C Max. Storage Temp. TL=+25C 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l OIP3 vs. Frequency VD=3.3 V, ID= 35 mA (Typ.) 35 18 P1dB vs. Frequency VD= 3.3 V, ID= 35 mA (Typ.) 30 OIP3 (dBm) P1dB (dBm) 15 25 12 9 20 TL=+25C 15 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 6 0 0.5 1 1.5 2 Frequency (GHz) TL=+25C 2.5 3 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101382 Rev C Preliminary Preliminary SGA-3586 DC-5000 MHz SiGe Amplifier Typical RF Performance Over Temperature ( Bias: VD= 3.3 V, ID= 35 mA (Typ.) ) |S | vs. Frequency 21 |S | vs. Frequency 11 32 24 S21(dB) 16 8 S21(dB) +25C -40C +85C 0 -10 -20 -30 TL 0 0 1 2 3 4 Frequency (GHz) 5 TL -40 6 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C 6 |S | vs. Frequency 12 |S | vs. Frequency 22 -10 -15 S21(dB) -20 -25 S21(dB) +25C -40C +85C 0 -10 -20 -30 TL -30 0 1 2 3 4 Frequency (GHz) 5 TL -40 6 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C 6 NOTE: Full S-parameter data available at www.sirenza.com 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101382 Rev C Preliminary Preliminary SGA-3586 DC-5000 MHz SiGe Amplifier Basic Application Circuit RBIAS Application Circuit Element Values Frequency (Mhz) Reference Designator 500 850 1950 2400 3500 VS 1 uF 1000 pF CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 1 SGA-3586 3 2 CB 4 RF out Recommended Bias Resistor Values for ID=35mA RBIAS=( VS-VD ) / ID Supply Voltage(VS) RBIAS 5V 51 8V 130 10 V 180 12 V 240 VS RBIAS 1 uF 1000 pF Note: RBIAS provides DC bias stability over temperature. Mounting Instructions 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown. LC CD CB A35 CB 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. Pin # Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. Part Identification Marking The part will be marked with an "A35" designator on the top surface of the package. 3 1 2, 4 GND 4 A35 1 2 3 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number SGA-3586 Reel Size 13" Devices/Reel 3000 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101382 Rev C Preliminary Preliminary SGA-3586 DC-5000 MHz SiGe Amplifier PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to drawing posted at www.sirenza.com for tolerances. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-101382 Rev C |
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